| PART |
Description |
Maker |
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| HMC441 HMC440QS16G HMC441LM1 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 7.0 - 15.5 GHz
HBT DIGITAL PHASE-FREQUENCY DETECTOR/ 10 - 1300 MHz/ w/ INTEGRATED 5-BIT COUNTER/ 10 - 2800 MHz
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| UPC2710TB1 UPC2710TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
NEC
|
| 2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SA1242 E000487 |
TRANSISOTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISOTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1723 |
PNP Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Medium-Power Amplifier Applications
|
SANYO
|
| CHV2710-QJ CHV2710-QJ-0GA0 CHV2710-QJ-0G0T CHV2710 |
2.5 GHz InGaP HBT 5W Linear Power Amplifier 2300 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Mimix Broadband, Inc.
|
| 487LP5E HMC487LP509 HMC487LP5E |
SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz
9000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
Hittite Microwave Corporation
|
| SST11LP1210 SST11LP12-QCF SST11LP12-10 |
4.9-5.8 GHz High-Linearity Power Amplifier
4900 MHz - 5800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Silicon Storage Technology, Inc
Microchip Technology Inc.
Silicon Storage Technol...
|
| 30MPA0562 |
28000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
28.0-31.0 GHz GaAs MMIC Power Amplifier
|
MIMIX[Mimix Broadband]
|
